CXMT Sets 2026 Target for Denser Server Memory

ChangXin Memory Technologies said it had made progress on a denser memory-cell design and plans to introduce a server-memory product based on it by the end of 2026, a target that coincided with declines in shares of major memory-chip makers on Monday. Micron Technology shares fell about 4% to 5% in Monday trading, while SK Hynix declined roughly 4%. Samsung Electronics also fell in early trading. The moves came as investors assessed the potential competitive impact of CXMT’s announcement, alongside broader weakness in technology stocks. Reports cited different intraday observations, rather than a single closing price. CXMT President Cao Kanyu discussed the company’s progress at an industry event in Shanghai over the weekend. The design, known as 4F², aims to reduce the area occupied by each memory cell, potentially allowing more data to be stored on a chip. Conventional DRAM production widely uses a 6F² cell structure. CXMT has described a vertical surrounding-gate transistor as part of its design. The company’s stated plan is to use the technology in a server-memory product, with reports identifying the intended product as a DDR5 registered DIMM.