CXMT says fifth-generation DRAM platform enters mass production

ChangXin Memory Technologies said on Sunday that its fifth-generation DRAM platform has entered mass production, along with two 24Gb LPDDR5X memory products aimed at smartphones and other portable electronics. The Chinese memory maker set out technical details of its G5 process, putting the active-area halfpitch at 11.95 nanometres and the storage capacitor aspect ratio at 45:1, figures it said were reached using quadruple-patterning lithography. The company claims the platform produces at least 50 percent more gross dies per wafer than its fourth generation on an 8Gb baseline, and that the new chips hold 50 percent more data than comparable predecessors. Gross die count measures potential chips from a wafer before defective units are screened out, and CXMT has not disclosed actual manufacturing yields. Luo Xiaodong, CXMT vice president and head of its marketing centre, said at the World Manufacturing Convention in Hefei that the company's process capability is now on par with the most advanced mass-produced nodes in the industry.