Nvidia Sets TSMC Process for Custom HBM Base Dies

Nvidia has asked Samsung Electronics, SK Hynix and Micron Technology to use Taiwan Semiconductor Manufacturing Co.’s 3-nanometer process for base dies in its custom NVHBM memory, according to a report based on industry sources. Samsung has accepted the requirement, the report said, in a manufacturing arrangement that would bring it together with TSMC at the HBM production stage for the first time. The reported specifications call for TSMC’s 3-nanometer process for NVHBM base dies and sixth-generation DRAM technology for the memory core dies. Nvidia’s approach is intended to standardize how its custom memory is made across suppliers and reduce the need to verify different base-die implementations separately. NVHBM places Nvidia’s custom memory controller in the base die. The company has described that design as a way to standardize implementation across memory suppliers. Reported design targets are up to 30% greater memory bandwidth and 15% lower power consumption than standard HBM4E. Those figures are targets, not demonstrated results from products in shipment. Samsung reportedly accepted Nvidia’s requirements after an internal review. It plans to continue making standard HBM...