Samsung launches UFS 5.0 storage, doubling read speed

Samsung Electronics announced on Tuesday, June 23, 2026, the development of its next-generation universal flash storage solution, UFS 5.0, positioning it as a critical component for the growing field of on-device artificial intelligence. The company stated the new standard sets a performance benchmark for mobile memory, aiming to reduce latency and accelerate response times for large language models running directly on smartphones and other portable devices.

The solution integrates the latest embedded memory interface standard from the semiconductor consortium JEDEC and is built on Samsung's ninth-generation vertical NAND technology. It achieves a sequential read speed of up to 10.8 gigabytes per second and a sequential write speed of up to 9.5 gigabytes per second. Samsung said these figures are more than twice as fast as its previous UFS 4.1 solution, representing what it claims are the highest UFS 5.0 speeds announced globally.

A key focus of the development is improved power efficiency. Samsung stated the UFS 5.0 solution is over 40 percent more power-efficient than its predecessor, achieved through innovations including clock gating and multi-voltage technologies. These...