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Samsung and AMD Sign AI Memory Partnership MOU

Published 18 March 2026

Samsung Electronics and Advanced Micro Devices signed a memorandum of understanding on March 18, 2026, to deepen their partnership on memory chip supplies for artificial intelligence infrastructure, positioning Samsung as a primary provider for AMD's next-generation AI products. The agreement was formalized at Samsung's advanced chip manufacturing facility in Pyeongtaek, South Korea, during a ceremony attended by AMD Chair and CEO Lisa Su and Samsung Electronics Vice Chairman and CEO Young Hyun Jun.

The deal centers on Samsung supplying its upcoming high-bandwidth memory, known as HBM4, for AMD's Instinct MI455X AI accelerators. It also includes optimized DDR5 memory for AMD's sixth-generation EPYC processors, codenamed Venice. These components will support integrated AI systems combining AMD's Instinct graphics processing units, EPYC central processing units, and rack-scale architectures like the AMD Helios platform. Samsung's HBM4, the first to enter mass production, uses a sixth-generation 10-nanometer-class DRAM process and a 4-nanometer logic base die, offering speeds up to 13 gigabits per second and bandwidth exceeding 3.3 terabytes per second.

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