CXMT Launches Advanced DRAM Platform, Eyes NAND Flash Market

Chinese memory chipmaker CXMT announced on Sunday that its fifth-generation DRAM technology platform has entered mass production, marking a significant step in the country's push to build a competitive domestic semiconductor industry. The company, formally known as ChangXin Memory Technologies, stated the new platform achieves 11.95-nanometer feature spacing, a technical advance it claims brings its manufacturing capability close to the most advanced nodes currently in mass production globally. The announcement was made at the 2026 World Manufacturing Convention in Hefei. CXMT's vice president, Luo Xiaodong, stated that the company's process capability is now "on par with the most advanced mass-produced nodes out there in the industry." The platform uses quadruple patterning technology to achieve the finer circuit patterns, allowing for higher memory density and efficiency. Alongside the platform launch, CXMT unveiled two new 24-gigabit LPDDR5X memory products built on the technology. These low-power DRAM chips, designed for smartphones and portable electronics, are already in mass production and offer a 50% increase in capacity over the company's previous equivalent products.